Nanowire Photodetectors enhanced by Electron Traps and Optical Manipulation

High-performance photodetectors for infrared radiation (IR) are key components in e.g. optical communication, night vision, thermal screening, environmental monitoring, and novel photonic synapses.

This proposal deals with fundamental understanding of a novel photogating (amplification) mechanism, induced by unknown electron traps,  recently discovered by us in InP nanowire (NW) photodetectors with embedded InAsP quantum discs (QDiscs).

We also target new ways of tailoring this photogating effect for different two-and three-terminal photodetector applications.

We will also integrate these phototodetectors with novel photonic crystals and metasurfaces for improved IR in-coupling to realize bias-tunable broadband NW phototransistors.The main aims of this proposal are:- Fundamental studies of photogating mechanisms in NW-based photodetectors.- Designed absorption enhancement by photonic crystal and metasurface engineering.2-year goals:- Developed two-terminal photonic synapses.- Developed metallic metasurfaces for enhanced IR-incoupling4-year goals:- Developed fundamental understanding of electron-photon interactions in bias-tunable photogated NW/QDisc array photodetectors- Proof-of-concept bias-tunable broadband (NIR-SWIR) phototransistor on Si/SOI with optical amplification.The project group is an internationally recognized team in nanophotonics, nanoelectronics and materials science, including researchers from NanoLund@Lund University and Halmstad University.