SMF-C3NiT: GaN RF HEMTs and MMIC Technology

Purpose and goal:

There is a need for high-performance monolithic microwave integrated circuits (MMICs) for the W-band (75-110 GHz) and above. The main driving force behind this development on the market are next generation radar/imaging and telecom systems operating in the W-band and D-band (110-170 GHz). At such high frequencies, conventional MMIC technologies based on e.g.

GaAs or SiGe cannot be used due to limited output power. This project focused on the development of MMICs based on GaN technology, which offers substantially improved power capabilities at high frequencies. Expected results and effects:

The commercialization of high-frequency MMICs based on GaN technology will lead to a unique product offering based on a largely Swedish supply chain. This will strengthen the growth and competitiveness of the local electronics industry. European system manufacturers will also benefit from having a local high performance GaN MMIC supplier, as most potential competitors are US-based companies restricted by International Trades in Arms Regulation (ITAR).

Approach and implementation: Work packages: 1 Project Management 2 Product Specification 3 MMIC Design (Evaluation of design concepts / topologies. Design and simulation of the MMICs) 4 MMIC Fabrication (Optimization of HEMT devices for MMICs) 5 MMIC Test and Verification