ECSEL 2020 RIA YeSvGaN -Vertical GaN on Silicon: Wide Band Gap Power at Silicon Cost

Purpose and goal:

YeSvGaN will establish a new class of vertical GaN power electronics transmitters on silicon that combines the benefits of Wide Bandgap transistors with the cost benefits of existing silicon technology. These transistors can reduce power conversion losses in several cost-effective applications. Hexagem and Lund University will further develop their unique technology to fabricate high-quality GaN material and deliver GaN on silicon wafers for further component development, processing and material and component evaluation by other consortium partners.

Expected results and effects:

The project gives the Swedish partners access to advanced device concepts, requirements specifications for end products and insights from the entire value chain as well as from the power electronics market and what implications this has for the technology, which provides opportunities to validate the technology through project partners for both Hexagem and University of Lund. Expected results are helping the Swedish partners to scale up the technology to large semiconductor wafers to strengthen their position on the European scene, and to provide new collaborative links.

Approach and implementation:

Hexagem will further develop its unique technology for creating high-quality GaN material and deliver GaN on silicon wafers for further component development, processing and material and component evaluation by other consortium partners. Lund University (ULUND) will develop GaN on silicon and will develop GaN materials and component structures on Hexagem´s materials.

ULUND will also characterize and evaluate electrical properties of materials and device structures from all partners using advanced terahertz spectroscopy.