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Active CR&D BILATERAL UKRI Gateway to Research

PhotUnion: Cost-efficient and Scalable Heterogeneous Integration of Photodiodes on Transimpedance Amplifiers

£3.02M GBP

Funder Innovate UK
Recipient Organization Hilight Semiconductor Limited
Country United Kingdom
Start Date Jan 01, 2025
End Date Jan 31, 2027
Duration 760 days
Data Source UKRI Gateway to Research
Grant ID 10121133
Grant Description

The goal of this project -- **PhotUnion -** is to leverage microtransfer printing technology (uTP) to develop a cost-efficient, scalable, heterogenous, wafer-level direct assembly process for photodiodes (PD) on top of transimpedance amplifiers (TIA) that surpasses current state-of-the-art performance at a reduced cost.

In particular, the end product will comprise an optimized 10G III-V photodiodes produced by Albis Optoelectronics (Albis) and microtransfer printed by CSEM at the wafer level onto a 10G Super TIA wafer from HiLight Semiconductor (HiLight).

This final product offers a cost-effective, high-sensitivity alternative to existing avalanche photodiode (APD) based solutions, enabling low electromagnetic interference (EMI) operation in fiber-to-the-home (FTTH) applications, specifically addressing the 10G-PON market worldwide.

The direct, and close union of photodiode on TIA opens up a wide range of cost-effective and high-performance combinations for various applications, including 25G and 50G PON for future FTTH, as well as 800G, 1.6T and 3.2T datacom for AI.

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