Spintronics based on Ferroelectrics

Current state of the art technologies demand high density and high performance electronic devices with reduced energy consumption. This stretches the performance limits of Complementary Metal Oxide Semiconductor (CMOS) transistors technology. Among the many beyond CMOS approaches, one of the most promising routes is the spintronics ecosystem.

In the framework of this project, we aim to investigate a beyond CMOS spintronics device recently proposed and called Ferroelectric Spin Orbit (FESO) device, where the spin polarized states of a Rashba interface are manipulated through its proximity with a ferroelectric material.

The projects innovation relies on the exploitation of this effect to transform spin to charge currents in a controllable manner through the reversing a ferroelectrics polarization, to develop a new in memory computing technology.

The FESO technology involves non-volatility, low operating voltage and much lower energy consumption compared to conventional CMOS and other spintronic devices.

As a main scientific objective, the researcher will investigate and understand the effect of the ferroelectric layer to FESO devices performance in terms of materials choice, growth quality, dimensions and compatibility to Ferromagnetic materials.

The main technological objective is to fabricate a prototype and characterize its operational performance with regards to cutting edge nanoelectronics standards. The results of the project and key performance of the FESO device will be tabulated in a roadmap. During this project the researcher will be trained in advanced Nanofabrication techniques and device characterization.

Except from the research skills, the researcher will also gain experience in a series of transferable skills.

This project constitutes a perfect opportunity to establish an independent scientific profile at the frontier of nanoelectronics and semiconductor industry, a key field in the framework of major European Commission initiatives.