Breaking limits Using Record enabling Silicon Technology with photonic management

The BURST project supports the efforts of a strategic European IBC (interdigitated back-contact) c-Si technology by improving the power conversion efficiency towards the practical limits. BURST will achieve efficiencies of at least 26% with thin (99 % of the theoretical limit. BURST will transfer lab-type fabrication processes to cost-effective, high throughput industrial fabrication methods (TRL5) by using high precision, rapid laser patterning and atmospheric dry etching.Advanced passivation and passivating contacts are essential in preventing recombination and harvesting the extra charge carriers generated from the advanced light management. BURST’s cell front side will achieve excellent passivation (>>750 mV) and high transparency. Alloying BURST’s excellent poly-Si passivating rear contacts with Oxygen will mitigate parasitic absorption at the rear side.BURST will apply Aluminium and Copper as inexpensive and abundant materials with low-cost techniques to ensure a low-resistive contact (