Far-infrared semiconductor electronics

The project will establish frontline semiconductor terahertz electronics for far-infrared space instruments by exploring and combining InP-based semiconductors with thin silicon membrane technology.

The goal is to obtain high receiver sensitivity and stability for much less power consumption beyond what is currently considered state-of-the-art in the 2-5 THz frequency range.Terahertz measurements of the atmosphere are made routinely to monitor and reveal physical and chemical processes related to weather and climate change.

New space initiatives, using constellations of terahertz receivers on small satellites, can help to gain further data and insights about the climate system.

For atmosphere science, there is a need for a terahertz receiver without active cryogenic cooling that can operate over a broad ambient temperature range with sufficient sensitivity and can make observations over a long time.

For the supra-terahertz band (>3 THz), several challenges, such as power consumption and inefficient coupling to the terahertz radiation, leave a gap in semiconductor technology.

Hence, future Earth and space science missions need new compact heterodyne receiver solutions with improved energy conversion efficiency.Millimetre wave, antenna-integrated, InP-based Schottky barrier mixers have shown high sensitivity at a small cost in power consumption (local oscillator). Still, InP-substrates are fragile and not suitable for supra-terahertz circuits.

Therefore, combining robust, integrated silicon membrane technology with InP-based electronics can potentially revolutionise future space terahertz instrumentation.

This approach will enable compact, efficient and advanced room-temperature heterodyne receivers for far-infrared space science instruments and trigger future research on terahertz electronics in various applications.