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| Funder | European Commission |
|---|---|
| Recipient Organization | Universite de Strasbourg |
| Country | France |
| Start Date | Apr 01, 2024 |
| End Date | Mar 31, 2028 |
| Duration | 1,460 days |
| Number of Grantees | 6 |
| Roles | Participant; Associated Partner; Coordinator |
| Data Source | European Commission |
| Grant ID | 101129613 |
Future technological innovations in areas such as the Internet of things and wearable electronics require cheap, easily deformable and reasonably performing printed electronic circuitries.
However, current state-of-the-art (SoA) printed electronic devices show mobilities of ~10 cm2/Vs, about ×100 lower than traditional Si-electronics.
A promising solution to print devices from 2D semiconducting nanosheets gives relatively low mobilities (~0.1 cm2/Vs) due to the rate-limiting nature of charge transfer (CT) across inter-nanosheet junctions.
By minimising the junction resistance RJ, the mobility of printed devices could match that of individual nanosheets, i.e., up to 1000 cm2/Vs for phosphorene, competing with Si.
HYPERSONIC is a high-risk, high-gain interdisciplinary project exploiting new chemical and physical approaches to minimise RJ in printed nanosheet networks, leading to ultra-cheap printed devices with a performance ×10–100 beyond the SoA.
The chemical approach relies on chemical crosslinking of nanosheets with (semi)conducting molecules to boost inter-nanosheet CT.
The physical approach involves synthesising high-aspect-ratio nanosheets, leading to low bending rigidity and increased inter-nanosheet interactions, yielding conformal, large-area junctions of >10e4 nm2 to dramatically reduce RJ.
Our radical new technology will use a range of n- or p-type nanosheets to achieve printed networks with mobilities of up to 1000 cm2/Vs.
A comprehensive electrical characterisation of all nanosheet networks will allow us to not only identify those with ultra-high mobility but also to fully control the relation between basic physics/chemistry and network mobility.
We will demonstrate the utility of our technology by using our best-performing networks as complementary field-effect devices in next- generation, integrated, wearable sensor arrays.
Printed digital and analog circuits will read and amplify sensor signals, demonstrating a potential commercialisable application.
Msemicon Teoranta; Universiteit Antwerpen; The Chancellor Masters and Scholars of the University of Cambridge; The Provost, Fellows, Foundation Scholars & the Other Members of Board, of the College of the Holy & Undivided Trinity of Queen Elizabeth Near Dublin; Universite de Strasbourg; Universite de Mons
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