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| Funder | European Commission |
|---|---|
| Recipient Organization | Infineon Technologies Austria Ag |
| Country | Austria |
| Start Date | May 01, 2023 |
| End Date | Apr 30, 2026 |
| Duration | 1,095 days |
| Number of Grantees | 47 |
| Roles | Participant; Coordinator; Associated Partner |
| Data Source | European Commission |
| Grant ID | 101111890 |
ALL2GaN will be the backbone for the European Power Electronics Industry by offering an EU-born smart GaN Integration Toolbox.
The project will provide the base for applications with significantly increased material- and energy efficiency, thus meeting the global energy needs while keeping the CO2 footprint to the minimum.46 partners from 12 European countries will collaborate on 8 major objectives along the entire vertical value chain of power and RF electronics.
O1: Push the limits of industrial GaN devices and system-on-chip approaches for ≤ 100V O2: Leverage the full potential of innovative substrates for GaN O3: Achieve novel benchmark solutions for lateral GaN devices and integrated circuits ≥ 650V O4: Reach best technical and cost performance of RF GaN on Si with novel integration concepts O5: Break the packaging limits by application driven integrated solutions of high performance GaN products O6: Advance the methods to evaluate and optimize reliability and robustness of GaN components, modules, and systems for shortest time-to-market and maximum product availability at the end user O7: Demonstrate highest affordable performance for greener power electronics and RF applicationsO8: Road-mapping for the future GaN technology development and applications to support long-term exploitation/business cases and European leadership beyond ALL2GaN.The collaboration in ALL2GaN is based on a work package structure covering activities on novel power- and RF-GaN technologies for various voltage classes, latest packaging technologies, research on reliability and demonstration in 11 Use Cases.
With ambitious goals and a clear vision, ALL2GaN will unleash the energy saving and material efficiency potential of GaN semiconductors for a broad field of applications, thus being in line with the major challenges outlined in the ECS-SRIA.
ALL2GaN technology will directly contribute to energy saving and cutting-edge green technology innovation as…Every Watt counts!
Slovenska Technicka Univerzita V Bratislave; Nano Design Sro; Technische Universitaet Wien; for Optimal Renewable Energy Systems Sl; Technische Universitaet Graz; Infineon Technologies Austria Ag; Ballard Power Systems Europe As; Heraeus Deutschland Gmbh & Co Kg; Fraunhofer Gesellschaft Zur Forderung Der Angewandten Forschung Ev; Mondragon Goi Eskola Politeknikoa Jose Maria Arizmendiarrieta S Coop; Interuniversitair Micro-Electronica Centrum; Infineon Technologies Ag; Idryma Technologias Kai Erevnas; Institut Fuer Mikroelektronik Stuttgart; Delta Electronics (Norway); Rise Research Institutes of Sweden Ab; Nanowired Gmbh; Heraeus Electronics Gmbh & Co. Kg; Ecole Polytechnique Federale de Lausanne; Vysoke Uceni Technicke V Brne; Premium Sa; Ericsson Ab; Applied Micro Electronics Ame Bv; Mindcet Nv; Chemnitzer Werkstoffmechanik Gmbh; Attolight Sa; Silicon Austria Labs Gmbh; Kai Kompetenzzentrum Automobil - Und Industrieelektronik Gmbh; Imst Gmbh; Fronius International Gmbh; Ce-Lab Gmbh,Emv-Prufzentrum; Technische Universitaet Chemnitz; Corintis Sa; Aixtron Se; Namlab Ggmbh; Nexperia Bv; Alixlabs Ab; Swegan Ab; Thermo Fisher Scientific Brno Sro; Technische Universiteit Eindhoven; Signify Netherlands Bv; Blue World Technologies Aps; Universidad Politecnica de Madrid; Aalborg Universitet; Technische Universiteit Delft; Chalmers Tekniska Hogskola Ab; Ikerlan S. Coop
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