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Active HORIZON European Commission

Affordable smart GaN IC solutions as enabler of greener applications

€60.03M EUR

Funder European Commission
Recipient Organization Infineon Technologies Austria Ag
Country Austria
Start Date May 01, 2023
End Date Apr 30, 2026
Duration 1,095 days
Number of Grantees 47
Roles Participant; Coordinator; Associated Partner
Data Source European Commission
Grant ID 101111890
Grant Description

ALL2GaN will be the backbone for the European Power Electronics Industry by offering an EU-born smart GaN Integration Toolbox.

The project will provide the base for applications with significantly increased material- and energy efficiency, thus meeting the global energy needs while keeping the CO2 footprint to the minimum.46 partners from 12 European countries will collaborate on 8 major objectives along the entire vertical value chain of power and RF electronics.

O1: Push the limits of industrial GaN devices and system-on-chip approaches for ≤ 100V O2: Leverage the full potential of innovative substrates for GaN O3: Achieve novel benchmark solutions for lateral GaN devices and integrated circuits ≥ 650V O4: Reach best technical and cost performance of RF GaN on Si with novel integration concepts O5: Break the packaging limits by application driven integrated solutions of high performance GaN products O6: Advance the methods to evaluate and optimize reliability and robustness of GaN components, modules, and systems for shortest time-to-market and maximum product availability at the end user O7: Demonstrate highest affordable performance for greener power electronics and RF applicationsO8: Road-mapping for the future GaN technology development and applications to support long-term exploitation/business cases and European leadership beyond ALL2GaN.The collaboration in ALL2GaN is based on a work package structure covering activities on novel power- and RF-GaN technologies for various voltage classes, latest packaging technologies, research on reliability and demonstration in 11 Use Cases.

With ambitious goals and a clear vision, ALL2GaN will unleash the energy saving and material efficiency potential of GaN semiconductors for a broad field of applications, thus being in line with the major challenges outlined in the ECS-SRIA.

ALL2GaN technology will directly contribute to energy saving and cutting-edge green technology innovation as…Every Watt counts!

All Grantees

Slovenska Technicka Univerzita V Bratislave; Nano Design Sro; Technische Universitaet Wien; for Optimal Renewable Energy Systems Sl; Technische Universitaet Graz; Infineon Technologies Austria Ag; Ballard Power Systems Europe As; Heraeus Deutschland Gmbh & Co Kg; Fraunhofer Gesellschaft Zur Forderung Der Angewandten Forschung Ev; Mondragon Goi Eskola Politeknikoa Jose Maria Arizmendiarrieta S Coop; Interuniversitair Micro-Electronica Centrum; Infineon Technologies Ag; Idryma Technologias Kai Erevnas; Institut Fuer Mikroelektronik Stuttgart; Delta Electronics (Norway); Rise Research Institutes of Sweden Ab; Nanowired Gmbh; Heraeus Electronics Gmbh & Co. Kg; Ecole Polytechnique Federale de Lausanne; Vysoke Uceni Technicke V Brne; Premium Sa; Ericsson Ab; Applied Micro Electronics Ame Bv; Mindcet Nv; Chemnitzer Werkstoffmechanik Gmbh; Attolight Sa; Silicon Austria Labs Gmbh; Kai Kompetenzzentrum Automobil - Und Industrieelektronik Gmbh; Imst Gmbh; Fronius International Gmbh; Ce-Lab Gmbh,Emv-Prufzentrum; Technische Universitaet Chemnitz; Corintis Sa; Aixtron Se; Namlab Ggmbh; Nexperia Bv; Alixlabs Ab; Swegan Ab; Thermo Fisher Scientific Brno Sro; Technische Universiteit Eindhoven; Signify Netherlands Bv; Blue World Technologies Aps; Universidad Politecnica de Madrid; Aalborg Universitet; Technische Universiteit Delft; Chalmers Tekniska Hogskola Ab; Ikerlan S. Coop

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