Synthesis of Transition metal dichalcogenides Optimized for MRAMs

Energy use in information and computation technology (ICT) is growing unsustainably.

The pandemic has further accelerated this trend: greenhouse gas emissions were lower in 2020 than in 2019 globally (due to overall decreased economic activity) but the increase in demand for digital connection translated in ICT using 8% of the world's electricity a figure that keeps rising yearly.

It is therefore imperative to reduce computing power consumption.Aim of this project is the functionalization of 2D transition metal dichalcogenides (TMDs) for their use as channel layers in spin-orbit torque magnetic RAMs (SOT-MRAMs).

Compared to current e-FLASH memories used in ICT, SOT-MRAMs require significantly lower operation voltage while having orders of magnitude higher endurance.

To improve the efficiency of SOT-MRAMs beyond the state of the art, STORM will develop methods to maximize the TMDs valence-band spin-orbit splitting.

A larger spin-orbit splitting translates in a larger torque exerted on an adjacent ferromagnet, thus reducing the current needed for the ""writing"" operation of the SOT-MRAM operation.

After optimizing the channel layer, TMD/ferromagnet heterostructures will be realized and studied, to reproduce the assembly at the heart of SOT-MRAMS.Implemented at IMDEA Nanociencia under the supervision of A.

Vazquez de Parga, STORM will allow the researcher to learn new materials growth (MBE) and analysis techniques (SR-ARPES).

Interdisciplinary expertise will be developed during a secondment period at ALBA Synchrotron, under the supervision of P. Gargiani. A collaboration with an industrial partner (M. Drouard at Antaios) will strongly benefit the researcher's intersectoral communication skills.

The exploitation and communication plan ensure impactful sharing of the results at multiple levels.Thanks to the transfer of knowledge between researcher and the hosting groups STORM is set to be a step towards the realization of low-power, technologically relevant devices.