Cmos cOmpatible optoelectroNic deviCEs PlaTform for 2d-materials

The need for inexpensive yet highly efficient optoelectronic devices such as LED/Laser/Photodetector/Solar Cells is driving the search for a new generation of semiconductors that have high absorbance in the visible, broad wavelength operation range, are transparent and flexible albeit with strong light-matter interaction, and are easy to process.

Manufacturing these optoelectronic devices at a large scale involves concerns at technological, economical, ecological, social, and political levels. Ideally, the new materials are abundant, easily processed, and feature long term stability and non-toxicity.

The advent of 2D transition metal dichalcogenides (TMDs). e.g., MoS2 and WS2, has generated great expectations since these materials fulfill all these requirements. 2D-TMDs exhibit direct band gaps, high absorption coefficients, and high carrier mobility values, making them promising candidates for optoelectronic applications.

The out-of-plane quantum confinement responsible for the direct bandgap in the monolayer also allows for the modulation of the bandgap as a function of the number of layers. We propose the study of a large production of the 2D materials compatible with the CMOS industry.

That pushes up the fabrication scale of the 2D material and make it compatible with the photonics integrated circuits (PICs) platform that nowadays are in the market.

The co-integration of the PICs and 2D materials allows a new generation of devices, such as label-free biosensor with a small footprint, energy harvesting, room temperature quantum devices for computing and communication, and open the door to new quantum sensors.