Energy-efficient Third Generation Bipolar Technology (ENERGY-3GBT)

ENERGY-3GBT will place the UK at the centre of next-generation power transistor production, ensuring UK industry is not impeded by global power semiconductor supply chain bottlenecks and can lead the world in improving energy-efficiency in the drive to net-zero.

ENERGY-3GBT will develop, optimise and demonstrate low-cost UK-based pilot-scale manufacture of 99% efficient silicon-based third-generation bipolar transistors (3GBTs) that outperform 95%-efficient Insulated Gate Bipolar Transistors (IGBTs) and best-in-class 99% efficient Gallium Nitride (GaN) and Silicon Carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETS) in applications requiring 10-100A, =1700V, =50 kHz switching speeds.

ENERGY-3GBT initially targets replacement of IGBTs in industrial variable frequency drives (VFDs) through project partner Siemens UK. Secondary applications targeted include wind turbine power-converters, next-generation electric vehicles, rail electrification, 5G and more.

Adoption of the 99% efficient 3GBT in industrial drives in the UK (accounting for about half of the manufacturing sector's delivered energy use) could save users £228.4m/year in reduced electricity costs and reduce greenhouse emissions by 440ktCO2e/year. Ultimately, replacement of IGBTs in industrial drives, renewable energy power converters, electric vehicles, rail, 5G and many more high-power products has potential to make a significant contribution to the UK's net zero ambitions.